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APT6013B2LL |
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| Part Number | APT6013B2LL |
| Manufacturer | Advanced Power Technology |
| Description | APT6013B2LL APT6013LLL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Powe... |
| Features |
rage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T IO E T C MA N A OR V AD INF
43 172 ±30 ±40 565 4.52 300 43 50
(Repetitive and Non-Repetitive)
1 4
600
Volts Watts W/°C °C Amps mJ
-55 to 150
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
600 43 0.130 100 500 ±100 3 5
(VDS > ID(on)... |
| Document |
 APT6013B2LL Data Sheet
PDF 70.14KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | APT6013B2LL |
INCHANGE |
N-Channel MOSFET |
|
| 2 | APT6013B2FLL |
Advanced Power Technology |
Power MOSFET |
|
| 3 | APT6013B2FLL |
INCHANGE |
N-Channel MOSFET |
|
| 4 | APT6013JFLL |
Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
|
| 5 | APT6013JLL |
Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
|
| 6 | APT6013JVR |
Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
|
Desde 2024. D4U Semiconductor.
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