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APT6011B2VFR |
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| Part Number | APT6011B2VFR |
| Manufacturer | Advanced Power Technology |
| Description | APT6011B2VFR 600V 49A 0.110W POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, i... |
| Features |
y
L A C I N H C N E T O I D T E A C M N R A O V F D A IN
600 49 196 ±30 ±40 625 5.0 -55 to 150 300 49 50
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
600 49 0.110 250 1000 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-8061 rev- 01-2000
Zero Gate Voltage ... |
| Document |
 APT6011B2VFR Data Sheet
PDF 34.75KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | APT6011B2VR |
Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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| 2 | APT6011LVFR |
Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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| 3 | APT6011LVR |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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| 4 | APT6010B2FLL |
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Power MOSFET |
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| 5 | APT6010B2FLL |
INCHANGE |
N-Channel MOSFET |
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| 6 | APT6010B2LL |
Advanced Power Technology |
Power MOSFET |
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Desde 2024. D4U Semiconductor.
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