APT50M60JN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

APT50M60JN

Advanced Power Technology
APT50M60JN
APT50M60JN APT50M60JN
zoom Click to view a larger image
Part Number APT50M60JN
Manufacturer Advanced Power Technology
Title N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Features Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 5.0mA) 2 RDS(ON) APT50M6...

Document Datasheet APT50M60JN Data Sheet
PDF 60.24KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 APT50M60L2VFR
Advanced Power Technology
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Datasheet
2 APT50M60L2VR
Advanced Power Technology
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Datasheet
3 APT50M65B2FLL
Advanced Power Technology
Power MOSFET Datasheet
4 APT50M65B2FLL
INCHANGE
N-Channel MOSFET Datasheet
5 APT50M65B2LL
Advanced Power Technology
Power MOSFET Datasheet
6 APT50M65B2LL
INCHANGE
N-Channel MOSFET Datasheet
More datasheet from Advanced Power Technology
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad