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APT5010JLL |
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| Part Number | APT5010JLL |
| Manufacturer | Advanced Power Technology |
| Description | APT5010JLL 500V 44A 0.100 W S G D S POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addre... |
| Features |
d Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I E T C MA N A OR V AD INF
500 44 176 ±30 ±40 440 3.52 300 44 50 -55 to 150
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
1800
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 44 0.100 25 250 ±100 3 5
(VDS > I ... |
| Document |
 APT5010JLL Data Sheet
PDF 61.27KB |
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Desde 2024. D4U Semiconductor.
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