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APT5010JLC |
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| Part Number | APT5010JLC |
| Manufacturer | Advanced Power Technology |
| Description | APT5010JLC 500V 44A 0.100 W S G D S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optim... |
| Features |
ase for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I D T E A C M N R A O V F D A IN
500 44 176 ±30 ±40 450 3.6 -55 to 150 300 44 50
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 44 0.100 25 250 ±100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resist... |
| Document |
 APT5010JLC Data Sheet
PDF 35.92KB |
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Desde 2024. D4U Semiconductor.
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