APT5010B2VR |
Part Number | APT5010B2VR |
Manufacturer | Advanced Power Technology |
Description | APT5010B2VR 500V 47A 0.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing d... |
Features |
mps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 47 0.100 25 250 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5611 Rev B
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0... |
Document |
APT5010B2VR Data Sheet
PDF 61.80KB |
Similar Datasheet
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1 | APT5010B2VFR |
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2 | APT5010B2 |
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3 | APT5010B2FLL |
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4 | APT5010B2FLL |
INCHANGE |
N-Channel MOSFET | |
5 | APT5010B2LC |
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6 | APT5010B2LL |
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