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APT5010B2VFR |
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| Part Number | APT5010B2VFR |
| Manufacturer | Advanced Power Technology |
| Description | APT5010B2VFR 500V 47A 0.100Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, i... |
| Features |
Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 47 0.100 250 1000 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5624 Rev A
Zero Gate Voltage Drain Current (VDS = VDSS, ... |
| Document |
 APT5010B2VFR Data Sheet
PDF 64.64KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | APT5010B2VR |
Advanced Power Technology |
Power MOSFET |
|
| 2 | APT5010B2 |
Advanced Power Technology |
Power MOSFET |
|
| 3 | APT5010B2FLL |
Advanced Power Technology |
Power MOSFET |
|
| 4 | APT5010B2FLL |
INCHANGE |
N-Channel MOSFET |
|
| 5 | APT5010B2LC |
Advanced Power Technology |
high voltage N-Channel enhancement mode power MOSFET |
|
| 6 | APT5010B2LL |
Advanced Power Technology |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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