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APT5010B2LL |
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| Part Number | APT5010B2LL |
| Manufacturer | Advanced Power Technology |
| Description | 500V 46A 0.100W APT5010B2LL APT5010LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses ... |
| Features |
orage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T IO E T C MA N A OR V AD INF
46 184 ±30 ±40 500 4.0 300 46 50
(Repetitive and Non-Repetitive)
1 4
500
Volts Watts W/°C °C Amps mJ
-55 to 150
1800
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 46 0.100 25 250 ±100 3 5
(VDS > ID(on) ... |
| Document |
 APT5010B2LL Data Sheet
PDF 68.83KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | APT5010B2LC |
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high voltage N-Channel enhancement mode power MOSFET |
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| 2 | APT5010B2LL |
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| 3 | APT5010B2 |
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| 5 | APT5010B2FLL |
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| 6 | APT5010B2VFR |
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Desde 2024. D4U Semiconductor.
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