APT5010B2FLL |
Part Number | APT5010B2FLL |
Manufacturer | Advanced Power Technology |
Description | APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switc... |
Features |
issipation @ TC = 25°C Linear Derating Factor
520 Watts 4.0 W/°C
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 50 50 1600
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 23A) Zero Gate Voltage Drain Cu... |
Document |
APT5010B2FLL Data Sheet
PDF 165.20KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | APT5010B2FLL |
INCHANGE |
N-Channel MOSFET | |
2 | APT5010B2 |
Advanced Power Technology |
Power MOSFET | |
3 | APT5010B2LC |
Advanced Power Technology |
high voltage N-Channel enhancement mode power MOSFET | |
4 | APT5010B2LL |
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Power MOSFET | |
5 | APT5010B2LL |
INCHANGE |
N-Channel MOSFET | |
6 | APT5010B2VFR |
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Power MOSFET |