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APT1001RBVR |
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| Part Number | APT1001RBVR |
| Manufacturer | Advanced Power Technology |
| Description | APT1001RBVR 1000V 11A 1.000Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing ... |
| Features |
on-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 11 1.00 25 250 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5572 Rev C
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 12... |
| Document |
 APT1001RBVR Data Sheet
PDF 68.19KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | APT1001RBLC |
Advanced Power Technology |
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| 2 | APT1001RBN |
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| 3 | APT1001R1AVR |
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| 4 | APT1001R1BN |
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| 5 | APT1001R1BVFR |
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| 6 | APT1001R1HVR |
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|
Desde 2024. D4U Semiconductor.
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