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APT1001RBN |
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| Part Number | APT1001RBN |
| Manufacturer | Advanced Power Technology |
| Description | D TO-247 G S APT1001RBN 1000V 11.0A 1.00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5030BN 500V 21.0A 0.30Ω N - CHANNEL ENHANCEMENT MO... |
| Features |
SS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
RDS(ON)
APT1001RBN
1.00
Ohms
IDSS IGSS VGS(TH)
250 1000 ± 100 2 4
µA nA Volts
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
050-0008 Rev B
0.40 40
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702 -1035 F-33700 Merignac - Fra... |
| Document |
 APT1001RBN Data Sheet
PDF 50.79KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | APT1001RBLC |
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| 2 | APT1001RBVR |
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| 3 | APT1001R1AVR |
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| 4 | APT1001R1BN |
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| 5 | APT1001R1BVFR |
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| 6 | APT1001R1HVR |
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Desde 2024. D4U Semiconductor.
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