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APT1001R6BN |
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| Part Number | APT1001R6BN |
| Manufacturer | Advanced Power Technology |
| Description | D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1002R4BN 1000V 6.5A 2.40Ω All Ratings: TC = 25°C unl... |
| Features |
sistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
2
6.5 1.60
Ohms
RDS(ON)
2.40 250 1000 ±100 2 4
µA nA Volts
IDSS IGSS VGS(TH)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
050-0109 Rev B
0.51 40
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
US... |
| Document |
 APT1001R6BN Data Sheet
PDF 50.32KB |
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Desde 2024. D4U Semiconductor.
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