APT1001R3BN |
Part Number | APT1001R3BN |
Manufacturer | Advanced Power Technology |
Description | D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1001R3BN 1000V 10.0A 1.30Ω All Ratings: TC = 25°C u... |
Features |
State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
2
10 1.10
Ohms
RDS(ON)
1.30 250 1000 ± 100 2 4
µA nA Volts
IDSS IGSS VGS(TH)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
050-0007 Rev C
0.40 40
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Follo... |
Document |
APT1001R3BN Data Sheet
PDF 52.10KB |
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