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APT1001R1HVR |
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| Part Number | APT1001R1HVR |
| Manufacturer | Advanced Power Technology |
| Description | APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases pac... |
| Features |
on-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 9 1.100 25 250 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5812 Rev A
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 1... |
| Document |
 APT1001R1HVR Data Sheet
PDF 66.94KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | APT1001R1AVR |
Advanced Power Technology |
MOSFET |
|
| 2 | APT1001R1BN |
Advanced Power Technology |
MOSFET |
|
| 3 | APT1001R1BVFR |
Advanced Power Technology |
MOSFET |
|
| 4 | APT1001R3BN |
Advanced Power Technology |
MOSFET |
|
| 5 | APT1001R6BFLL |
Advanced Power Technology |
POWER MOS 7 R FREDFET |
|
| 6 | APT1001R6BN |
Advanced Power Technology |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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