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WEDPNF8M721V-1215BM ETC 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package Datasheet


ETC
WEDPNF8M721V-1215BM
Part Number WEDPNF8M721V-1215BM
Manufacturer ETC
Description The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134, 217, 728 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of the chip’s 33,554,432-bit banks is organized as 4,096 rows by 512 columns by 16 bits...
Features n n n Package:
• 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm Commercial, Industrial and Military Temperature Ranges Weight:
• WEDPNF8M721V-XBX - 2.5 grams typical n n n n Sector Architecture
• One 16KByte, two 8KBytes, one 32KByte, and fif teen 64KBytes in byte mode
• One 8K word, two 4K words, one 16K word, and fifteen 32K word sectors in word mode.
• Any combination of sectors can be concurrently erased. Also supports full chip erase Boot Code Sector Architecture (Bottom) Embedded Erase and Program Algorithms Erase Suspend/Resume
• Supports reading data from or programing data to a secto...

Document Datasheet WEDPNF8M721V-1215BM datasheet pdf (1.25MB)




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8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package
The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134, 217, 728 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of the chip’s 33,554,432-bit banks is organized as 4,096 rows by 512 columns by 16 bits. Read and write accesses t...
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manufacturer
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8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package
The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134, 217, 728 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of the chip’s 33,554,432-bit banks is organized as 4,096 rows by 512 columns by 16 bits. Read and write accesses t...




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