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VTT1115 |
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| Part Number | VTT1115 |
| Manufacturer | PerkinElmer Optoelectronics |
| Description | A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection... |
| Features |
Dark Current lCEO H=0 (nA) Max. 100 100 100 VCE (Volts) 10 10 10 Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min. 30 30 30 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min. 6.0 4.0 4.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.40 0.40 0.40 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 Ω µsec, Typ. 5.0 8.0 8.0 Typ. ±15° ±15° ±15° Angular Response θ1/2
Part Number
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
103
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| Document |
 VTT1115 Data Sheet
PDF 23.40KB |
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