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VTT1017 |
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| Part Number | VTT1017 |
| Manufacturer | PerkinElmer Optoelectronics |
| Description | A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base conn... |
| Features |
5) 100 (5) Dark Current lCEO H=0 (nA) Max. 25 25 25 VCE (Volts) 20 20 10 Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min. 40 30 20 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min. 6.0 6.0 4.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.40 0.40 0.40 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 Ω µsec, Typ. 5.0 5.0 8.0 Typ. ±35° ±35° ±35° Angular Response θ1/2
Part Number
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
102
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| Document |
 VTT1017 Data Sheet
PDF 22.93KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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