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S10C70 |
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| Part Number | S10C70 |
| Manufacturer | Mospec Semiconductor |
| Description | MOSPEC S10C70 Thru S10C100 Schottky Barrier Rectifiers --- Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with ... |
| Features |
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O
ESD: 4KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC directives
... |
| Document |
 S10C70 Data Sheet
PDF 249.93KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S10C100 |
Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS |
|
| 2 | S10C30 |
Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS |
|
| 3 | S10C30GP |
CHENMKO |
SCHOTTKY BARRIER RECTIFIER |
|
| 4 | S10C35 |
Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS |
|
| 5 | S10C35GP |
CHENMKO |
SCHOTTKY BARRIER RECTIFIER |
|
| 6 | S10C40 |
Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS |
|
Desde 2024. D4U Semiconductor.
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