BU2720DF NXP Silicon Diffused Power Transistor Datasheet. existencias, precio

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BU2720DF

NXP
BU2720DF
BU2720DF BU2720DF
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Part Number BU2720DF
Manufacturer NXP (https://www.nxp.com/)
Description High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses u...
Features tem (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 10 25 10 14 150 6 45 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period Ths ≤ 25 ˚C ESD LIMITING VALUES SYMBOL VC PARAMETER CONDITIONS MIN. MAX. 10 UNIT kV Electrosta...

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