BU2508D NXP Silicon Diffused Power Transistor Datasheet. existencias, precio

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BU2508D

NXP
BU2508D
BU2508D BU2508D
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Part Number BU2508D
Manufacturer NXP (https://www.nxp.com/)
Description Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colo...
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.4 MAX. 1500 700 8 15 125 1.0 5.0 2.0 0.6 UNIT V V A A W V V A V µs ...

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