BU2506DX NXP Silicon Diffused Power Transistor Datasheet. existencias, precio

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BU2506DX

NXP
BU2506DX
BU2506DX BU2506DX
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Part Number BU2506DX
Manufacturer NXP (https://www.nxp.com/)
Description Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circui...
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 3.0 1.6 0.25 MAX. 1500 700 5 8 45 5 2.0 0.5 UNIT V V A A W V A V µs Ths ≤ 25 ˚C IC = 3.0 A; IB = 0.79 A IF = 3.0 A ICsat ...

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