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BTA216-800B |
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| Part Number | BTA216-800B |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rm... |
| Features |
full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 16 -800 800 UNIT V A
I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
-
140 150 98 100 2 5 5 0.5 150 125
A A A2s A/µs A V W W ˚C ˚C
over any 20 ms period
-40 -
1 Although not recommended, off-state voltages up to 800V ma... |
| Document |
 BTA216-800B Data Sheet
PDF 44.64KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BTA216-800C |
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| 2 | BTA216-800E |
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| 3 | BTA216-800E |
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| 4 | BTA216-800F |
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| 5 | BTA216-800F |
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| 6 | BTA216-500B |
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Desde 2024. D4U Semiconductor.
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