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Q62702-C1867 |
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| Part Number | Q62702-C1867 |
| Manufacturer | Siemens Semiconductor Group |
| Description | PNP Silicon AF Transistors q q q q q BCX 69 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 68 (NPN) Type BCX 6... |
| Features |
5.91
BCX 69
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter cutoff current VEB = 5 V DC current gain1) IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V BCX 69 BCX 69-10 BCX 69-16 BCX 69-25 IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitter voltage1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V AC ... |
| Document |
 Q62702-C1867 Data Sheet
PDF 145.07KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-C1861 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
| 2 | Q62702-C1864 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For general AF applications High collector current) |
|
| 3 | Q62702-C1865 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For general AF applications High collector current) |
|
| 4 | Q62702-C1866 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For general AF applications High collector current) |
|
| 5 | Q62702-C1868 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For general AF applications High collector current) |
|
| 6 | Q62702-C1869 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For general AF applications High collector current) |
|
Desde 2024. D4U Semiconductor.
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