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Q62702-C1721 |
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| Part Number | Q62702-C1721 |
| Manufacturer | Siemens Semiconductor Group |
| Description | PNP Silicon AF Transistors BC 807 BC 808 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 ... |
| Features |
power dissipation, TC = 79 ˚C Ptot
285 215
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BC 807 BC 808
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 807 BC 808 Collector-base breakdown voltage IC = 100 µA BC 807 BC 808 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 mA; VCE = 1 V BC 807-16, BC 808-16 BC 807-25, BC... |
| Document |
 Q62702-C1721 Data Sheet
PDF 132.00KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-C172 |
Siemens Semiconductor Group |
PNP SILICON TRANSISTOR |
|
| 2 | Q62702-C1727 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
|
| 3 | Q62702-C1729 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
| 4 | Q62702-C170 |
Siemens Semiconductor Group |
PNP SILICON TRANSISTOR |
|
| 5 | Q62702-C1704 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
|
| 6 | Q62702-C1712 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
|
Desde 2024. D4U Semiconductor.
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