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Q62702-C1690 |
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| Part Number | Q62702-C1690 |
| Manufacturer | Siemens Semiconductor Group |
| Description | NPN Silicon AF Transistors BC 817 BC 818 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 ... |
| Features |
l power dissipation, TC = 79 ˚C Ptot
285 215
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BC 817 BC 818
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 817 BC 818 Collector-base breakdown voltage IC = 100 µA BC 817 BC 818 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 mA; VCE = 1 V BC 817-16, BC 818-16 BC 817-25, B... |
| Document |
 Q62702-C1690 Data Sheet
PDF 130.70KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-C1692 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) |
|
| 2 | Q62702-C1698 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
|
| 3 | Q62702-C1612 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For general AF applications High current gain) |
|
| 4 | Q62702-C1613 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
| 5 | Q62702-C1614 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
| 6 | Q62702-C1632 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For general AF applications High current gain) |
|
Desde 2024. D4U Semiconductor.
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