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Q62702-C1681 |
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| Part Number | Q62702-C1681 |
| Manufacturer | Siemens Semiconductor Group |
| Description | PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 65, BCW 66 (NPN) q Type BCW 67 A BCW 6... |
| Features |
t V
mA A mA mW ˚C
285 215
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BCW 67 BCW 68
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 67 BCW 68 Collector-base breakdown voltage IC = 10 µA BCW 67 BCW 68 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C BCW 67 BCW 68 BCW 67 BCW 68 IEB0 hFE 35 50 80 75 120 180 100 160 250 35 60 100 – – – – – – 1... |
| Document |
 Q62702-C1681 Data Sheet
PDF 134.68KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-C168 |
Siemens Semiconductor Group |
PNP SILICON TRANSISTOR |
|
| 2 | Q62702-C1687 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
|
| 3 | Q62702-C1688 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
|
| 4 | Q62702-C1689 |
Siemens Semiconductor Group |
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) |
|
| 5 | Q62702-C1612 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For general AF applications High current gain) |
|
| 6 | Q62702-C1613 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
|
Desde 2024. D4U Semiconductor.
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