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Q62702-C1501

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Part Number	Q62702-C1501
Manufacturer	Siemens Semiconductor Group
Description	NPN Silicon Darlington Transistors BCV 27 BCV47 For general AF applications q High collector current q High current gain q Complementary types: BCV 26, BCV 46 (PNP) q Type BCV 27 BCV 47 Marking FF...
Features	istics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 27 BCV 47 Collector-base breakdown voltage IC = 100 µA BCV 27 BCV 47 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 0.5 A, VCE = 5 V BCV 27 BCV 47 BCV 27 BCV 47 BCV 27 BCV 47 BCV 27 BCV 47 VCEsat VBEsat BCV 27 BCV 47 BCV 27 BCV 47 IEB0 hFE 40...
Document	Q62702-C1501 Data Sheet PDF 140.64KB

No.	Parte #	Fabricante	Descripción
1	Q62702-C150	Siemens Semiconductor Group	PNP SILICON TRANSISTOR
2	Q62702-C1502	Siemens Semiconductor Group	PNP Silicon AF Transistors
3	Q62702-C1504	Siemens Semiconductor Group	PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
4	Q62702-C1505	Siemens Semiconductor Group	NPN Silicon AF Transistors
5	Q62702-C1506	Siemens Semiconductor Group	NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
6	Q62702-C1507	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)