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Q62702-A771 |
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| Part Number | Q62702-A771 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Silicon Switching Diodes BAW 79 A … BAW 79 D For high-speed switching q High breakdown voltage q Common cathode q Type BAW 79 A BAW 79 B BAW 79 C BAW 79 D Marking GE GF GG GH Ordering Code (tape ... |
| Features |
cified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA BAW 79 A BAW 79 B BAW 79 C BAW 79 D Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VRmax VR = VRmax, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA Test circuit for reverse recovery time CD trr – – 10 1 – – pF µs Values typ. max. Unit V(BR) 50 100 200 400 VF – – IR – – – – 1 50 – – 1.6 2 – – – – – – – – V V µA Pulse generator: tp = 5 µs, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω ... |
| Document |
 Q62702-A771 Data Sheet
PDF 86.33KB |
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