Q62702-A0960 Siemens Semiconductor Group type), Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

Q62702-A0960

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Part Number	Q62702-A0960
Manufacturer	Siemens Semiconductor Group
Description	Silicon Schottky Diode Preliminary Data DBS mixer application to 12 GHz q Low noise figure q Medium barrier type q BAT 14-098 ESD: Electrostatic discharge sensitive device, observe handling precauti...
Features	ode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VBR VF – – ∆VF Values typ. – max. – 4 Unit V 0.43 0.55 – – 5.5 – – 10 0.35 – mV pF Ω – – – CT RF Semiconductor Group 2 BAT 14-098 Forward current IF = f (VF) Forward current IF = f (TS; TA) Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 14-098 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = Ω) f GHz 1 2 3 4 5 6 7 8 9 10 11 12 I = 0.02 mA MAG ANG 0.95 0.94 0.93 0.92 0.90 0.88 0.85 0.84 0.8...
Document	Q62702-A0960 Data Sheet PDF 88.97KB

No.	Parte #	Fabricante	Descripción
1	Q62702-A0042	Siemens Semiconductor Group	Silicon Crossover Ring Quad Schottky Diode
2	Q62702-A0043	Siemens Semiconductor Group	Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators)
3	Q62702-A0062	Siemens Semiconductor Group	Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type)
4	Q62702-A1004	Siemens Semiconductor Group	Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
5	Q62702-A1006	Siemens Semiconductor Group	Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
6	Q62702-A1010	Siemens Semiconductor Group	Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)