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PTF080601 |
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| Part Number | PTF080601 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. T... |
| Features |
• • Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power • Modulation Spectrum (dB) -30 -40 -50 -60 -70 -80 -90 • Efficiency (%) • • • PTF080601A Package 20248 PTF080601E Package 30248 PTF080601F Package 31248 Output Power (dBm) RF Characteristics at TCASE = 25°C unless oth... |
| Document |
 PTF080601 Data Sheet
PDF 293.74KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | PTF080601A |
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LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
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| 2 | PTF080601E |
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| 3 | PTF080601F |
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LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
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| 4 | PTF080101 |
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| 5 | PTF080101S |
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| 6 | PTF080451 |
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Desde 2024. D4U Semiconductor.
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