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R1387 |
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| Part Number | R1387 |
| Manufacturer | Hamamatsu Corporation |
| Description | Value 300 to 850 420 Multialkali 34 Borosilicate glass Circular cage 10 3.0 4.0 12 pin base JEDEC No.B12 43 E678 12A(supplied) 81 Unit nm nm mm dia. pF pF g MAXIMUM RATINGS (Absolute Maximum Values... |
| Features |
diant at 420nm Min. 80 Typ. 150 64 0.2 50 2.1 104 3.3 105 4 2.8 40 Max. Unit A/lm mA/W A/lm A/W 25 nA ns ns
Anode Sensitivity Gain Anode Dark Current (after 30min. storage in darkness) Anode Pulse Rise Time Time Response Electron Transit Time
10
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Electrodes Ratio 2 1 1 1 1 1 1 SuppIy Voltage : 1000Vdc, K : Cathode, Dy : Dynode, P : Anode Dy8 1 1 Dy9 1 Dy10 1 P
Subject to local technical requirements and regulations, availabili... |
| Document |
 R1387 Data Sheet
PDF 21.98KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | R13003F1 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 2 | R1307 |
Hamamatsu Corporation |
PHOTOMULTIPLIER TUBES |
|
| 3 | R1307-01 |
Hamamatsu Corporation |
PHOTOMULTIPLIER TUBES |
|
| 4 | R1331NC10A |
IXYS |
Distributed Gate Thyristor |
|
| 5 | R1331NC10B |
IXYS |
Distributed Gate Thyristor |
|
| 6 | R1331NC10C |
IXYS |
Distributed Gate Thyristor |
|
Desde 2024. D4U Semiconductor.
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