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PBSS5350D |
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| Part Number | PBSS5350D |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 1.2 Features and benefits Low collect... |
| Features |
Low collector-emitter saturation voltage VCEsat High current capability High efficiency due to less heat generation AEC-Q101 qualified Smaller Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Supply line switching circuits Battery management applications DC-to-DC conversion 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Conditions open base IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ... |
| Document |
 PBSS5350D Data Sheet
PDF 160.55KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PBSS5350D |
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