RBV2510 |
Part Number | RBV2510 |
Manufacturer | EIC discrete Semiconductors |
Description | RBV2500 - RBV2510 PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop H... |
Features |
:
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3
+
13.5 ± 0.3
~ ~
11 ± 0.2
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on ... |
Document |
RBV2510 Data Sheet
PDF 19.81KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | RBV2510 |
GME |
Silicon Bridge Rectifiers | |
2 | RBV2510 |
LGE |
Silicon Bridge Rectifiers | |
3 | RBV2510D |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
4 | RBV2500 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
5 | RBV25005 |
GME |
Silicon Bridge Rectifiers | |
6 | RBV25005 |
LGE |
Silicon Bridge Rectifiers |