RBV1004D |
Part Number | RBV1004D |
Manufacturer | EIC discrete Semiconductors |
Description | RBV1000D - RBV1010D PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop... |
Features |
:
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3
+
13.5 ± 0.3
~ ~
11 ± 0.2
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols ... |
Document |
RBV1004D Data Sheet
PDF 41.19KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | RBV1004 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
2 | RBV1000 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
3 | RBV1000D |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
4 | RBV1001 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
5 | RBV1001D |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
6 | RBV1002 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS |