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R3788 |
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| Part Number | R3788 |
| Manufacturer | Hamamatsu Corporation |
| Description | 185 to 750 160 to 750 420 Bialkali 8 24 UV glass Fused silica Unit TPMSB0081EA 100 nm PHOTOCATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) nm nm R4332 CATHODE RADIANT SENSITIVITY QUA... |
| Features |
Spectral Response R3788 ... 185 to 750 nm R4332 .... 160 to 750 nm High Cathode Sensitivity Luminous . 120 A/lm Typ. Radiant at 420nm ...... 90mA/W Typ. Quantum Efficiency at 210nm .. 40% Typ. (R4332) High Anode Sensitivity (at 1000V) Luminous ..... 1200A/lm Typ. Radiant at 420nm 9.0 105 A/W Typ.
APPLICATIONS
Fluorescence Spectrophotometers Emission S... |
| Document |
 R3788 Data Sheet
PDF 73.20KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | R3780 |
Microsemi Corporation |
Silicon Power Rectifier |
|
| 2 | R3708FC40V |
IXYS |
Distributed Gate Asymmetric Thyristor |
|
| 3 | R3708FC40W |
IXYS |
Distributed Gate Asymmetric Thyristor |
|
| 4 | R3708FC40X |
IXYS |
Distributed Gate Asymmetric Thyristor |
|
| 5 | R3708FC42V |
IXYS |
Distributed Gate Asymmetric Thyristor |
|
| 6 | R3708FC42W |
IXYS |
Distributed Gate Asymmetric Thyristor |
|
Desde 2024. D4U Semiconductor.
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