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RZ1214B35Y |
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| Part Number | RZ1214B35Y |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | 1 c b e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Top view MAM314 Fig.1 Simplified outl... |
| Features |
• Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input matching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS • Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band. 2 3 handbook, halfpage RZ1214B35Y PINNING ... |
| Document |
 RZ1214B35Y Data Sheet
PDF 69.53KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RZ1214B65Y |
NXP |
NPN microwave power transistor |
|
| 2 | RZ1200 |
Sanken electric |
Avalanche Diodes with built-in Thyristor |
|
| 3 | RZ1235 |
ETC |
Avalanche Diodes with built-in Thyristor |
|
| 4 | RZ1030 |
Sanken electric |
Avalanche Diodes with built-in Thyristor |
|
| 5 | RZ1040 |
Sanken electric |
Avalanche Diodes with built-in Thyristor |
|
| 6 | RZ1055 |
Sanken electric |
Avalanche Diodes with built-in Thyristor |
|
Desde 2024. D4U Semiconductor.
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