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SM16GZ51 |
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| Part Number | SM16GZ51 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SM16GZ51,SM16JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ51,SM16JZ51 AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak off−State Voltage l R.M.S On−State Current l H... |
| Features |
2.0g
― ― 13−16A1A
Note 1: di / dt test condition VDRM = 0.5 × Rated, ITM ≤ 25 A, tgw ≥ 10 µs, tgr ≤ 250 ns, igp = IGT × 2.0
1
2001-07-10
SM16GZ51,SM16JZ51
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I Gate Trigger Current II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage at Commutation VTM VGD IH Rth (j−c) dv / dt (dv / dt) c ITM = 25 A VD = Rated, Tc = 125°C VD = 12 V, ITM = 1 A Junctio... |
| Document |
 SM16GZ51 Data Sheet
PDF 189.53KB |
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