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THD215 |
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| Part Number | THD215 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use... |
| Features |
o 150 150
Uni t V V V A A A A W
o o
C C 1/6
December 1999
THD215HI
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.2
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CEO I CES I EBO Parameter Collector Cut-off Current (IB = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 700 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 Min. Typ . Max. 10 10 100 Un it µA µA µA V
V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat )∗ V BE(s at)∗ h FE∗ Collector-Emitter Saturation Voltag... |
| Document |
 THD215 Data Sheet
PDF 65.59KB |
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DELTA |
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