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TMS426409A |
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| Part Number | TMS426409A |
| Manufacturer | National Semiconductor |
| Description | DEVICE The TMS41x409A and TMS42x409A series are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 4 194 304 words of four bits each. These devices feature maximum RAS access tim... |
| Features |
wer Dissipation 3-State Unlatched Output High-Reliability Plastic 24 / 26-Lead 300-Mil-Wide Surface-Mount Small-Outline J-Lead (SOJ) Package (DJ Suffix) and 24/26-Lead 300-Mil-Wide Surface-Mount Thin Small-Outline Package (TSOP) (DGA Suffix) Operating Free-Air Temperature Range 0°C to 70°C
PIN NOMENCLATURE A0 – A11† DQ1 – DQ4 CAS NC OE RAS VCC VSS W Address Inputs Data In / Data Out Column-Address Strobe No Internal Connection Output Enable Row-Address Strobe 5-V or 3.3-V Supply‡ Ground Write Enable † A11 is NC for TMS417409A and TMS427409A. ‡ See Available Options Table AVAILABLE OPTIONS ... |
| Document |
 TMS426409A Data Sheet
PDF 515.50KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TMS426409A |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES |
|
| 2 | TMS426400 |
Texas Instruments |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
|
| 3 | TMS426400P |
Texas Instruments |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
|
| 4 | TMS426160 |
Texas Instruments |
1048576-WORD BY 16-BIT HIGH-SPEED DRAMS |
|
| 5 | TMS426160P |
Texas Instruments |
1048576-WORD BY 16-BIT HIGH-SPEED DRAMS |
|
| 6 | TMS427400 |
Texas Instruments |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
|
Desde 2024. D4U Semiconductor.
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