UTC2SA1020 |
Part Number | UTC2SA1020 |
Manufacturer | Unisonic Technologies |
Description | The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Ty... |
Features |
*Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.) *Complement to UTC 2SC2655
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL VALUE
-50 -50 -5 -2 0.5 1 150 -55 ~ +150
UNIT
V V V A W W °C °C
Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Ic Collector Power Dissipation PC Collector Power Dissipation PC* Junction Temperature Tj Storage Temperature TSTG * : Mounted on cermic substrate( 250mm2 × 0.8t )
ELECTRICAL CHARACTERISTICS (Ta=25°C,... |
Document |
UTC2SA1020 Data Sheet
PDF 170.99KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | UTC2SA1015 |
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR | |
2 | UTC2SA684 |
Unisonic Technologies |
PNP EPITAXIAL PLANAR TRANSISTOR | |
3 | UTC2SA733 |
Unisonic Technologies |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR | |
4 | UTC2SA928A |
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR | |
5 | UTC2SB772 |
Unisonic Technologies |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
6 | UTC2SB772S |
Unisonic Technologies |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |