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UPG110P |
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| Part Number | UPG110P |
| Manufacturer | NEC |
| Description | The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And the device is available in chip form. The µPG110P is suitable for the gain stage required hig... |
| Features |
• Ultra wide band : 2 to 8 GHz • High Power Gain : GP = 15 dB TYP. • Medium Power @f = 2 to 8 GHz : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz ORDERING INFORMATION PART NUMBER FORM Chip µPG110P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage Input Voltage Input Power Total Power Dissipation Operating Temperature Storage Temperature VDD VIN Pin Ptot*1 Topr*2 Tstg +10 –5 to +0.6 +10 1.5 –65 to +125 –65 to +125 V V dBm W °C °C *1 Mounted with AuSn hard solder *2 The temperature of base material beside the chip RECOMMENDED OPERATING CONDITIONS (TA = 25 °C) Supply Voltage Input Power VDD Pin... |
| Document |
 UPG110P Data Sheet
PDF 50.91KB |
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