XN1210 |
Part Number | XN1210 |
Manufacturer | Panasonic Semiconductor |
Description | Composite Transistors XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q q 0.3 -0.... |
Features |
1
Composite Transistors
PT — Ta
500
XN1210
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
60
VCE(sat) — IC
100
hFE — IC
IC/IB=10 400 VCE=10V
Collector to emitter saturation voltage VCE(sat) (V)
50
30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1 –25˚C Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Ta=25˚C 350 300 Ta=75˚C 250 25˚C 200 150 100 50 0 –25˚C Collector current IC (mA) 40 0.4mA 0.5mA 0.6mA 0.7mA 0.1mA 30 0.3mA 20 10 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector ... |
Document |
XN1210 Data Sheet
PDF 33.32KB |
Similar Datasheet
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