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IRFD214 |
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| Part Number | IRFD214 |
| Manufacturer | International Rectifier |
| Description | Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP... |
| Features |
Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max. 0.45 0.29 3.6 1.0 0.0083 ±20 57 0.45 0.10 4.8 -55 to + 150
300 (1.6mm from case)
Units
A
W W/°C
V mJ A mJ V/ns
°C
Thermal Resistance
RθJA
Parameter Junction-to-Ambient
Min. —
Typ. —
Max. Units 120 °C/W
Revision 0
IRFD214
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Res... |
| Document |
 IRFD214 Data Sheet
PDF 314.67KB |
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Desde 2024. D4U Semiconductor.
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