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IRFB260N |
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| Part Number | IRFB260N |
| Manufacturer | International Rectifier |
| Description | PD - 94270 SMPS MOSFET IRFB260N HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Lo... |
| Features |
-to-Ambient
Typ.
– – – 0.50 – – – Max. 0.40 – – – 62 Units °C/W Notes through are on page 8 www.irf.com 1 8/29/01 IRFB260N Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 – – – – – – 2.0 – – – – – – – – – – – – Typ. – – – 0.26 – – – – – – – – – – – – – – – – – – Max. Units Conditions – – – V VGS = 0V, ID = 250µA – – – V/°C Refere... |
| Document |
 IRFB260N Data Sheet
PDF 90.71KB |
Similar Datasheet
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| 2 | IRFB260N |
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Desde 2024. D4U Semiconductor.
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