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IRF9510 |
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| Part Number | IRF9510 |
| Manufacturer | Intersil Corporation |
| Description | IRF9510 Data Sheet July 1999 File Number 2214.4 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET des... |
| Features |
• 3.0A, 100V • rDS(ON) = 1.200Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance [ /Title (IRF95 10) /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark Symbol D Ordering Information PART NUMBER IRF9510 PACKAGE TO-220AB BRAND IRF9510 G S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) [ 5-3 CAUTION: T... |
| Document |
 IRF9510 Data Sheet
PDF 59.48KB |
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