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IRF630B |
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| Part Number | IRF630B |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
| Features |
• • • • • • 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF630B 200 9.0 5.7 36 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS630B 9.0 * 5.7 * 36 * 160 9.0 7.2 5.5 Units V A A ... |
| Document |
 IRF630B Data Sheet
PDF 859.82KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF630 |
STMicroelectronics |
N-channel MOSFET |
|
| 2 | IRF630 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 3 | IRF630 |
Vishay |
Power MOSFET |
|
| 4 | IRF630 |
Inchange Semiconductor |
N-channel mosfet transistor |
|
| 5 | IRF630 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 6 | IRF630A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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