IRF540 |
Part Number | IRF540 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in ... |
Features |
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM( •) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area. Value 100 100 ± 20 22 15 88 85 0.57 9 220 Unit V V V A A A W W/°C V/ns mJ -55 to 175 °C 1) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 12A, VDD = 30V Febru... |
Document |
IRF540 Data Sheet
PDF 294.40KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF540 |
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