IRF4905 |
Part Number | IRF4905 |
Manufacturer | International Rectifier |
Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp... |
Features |
0V Pulsed Drain Current Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
PD - 94816
IRF4905PbF
HEXFET® Power MOSFET
D
VDSS = -55V
RDS(on) = 0.02Ω
S
ID = -74A
TO-220AB
Max. -74 -52 -260 200 1.3 ± 20 930... |
Document |
IRF4905 Data Sheet
PDF 190.85KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF4905 |
Inchange Semiconductor |
P-Channel MOSFET Transistor | |
2 | IRF4905L |
International Rectifier |
Power MOSFET | |
3 | IRF4905L |
INCHANGE |
P-Channel MOSFET | |
4 | IRF4905LPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRF4905PbF |
International Rectifier |
Power MOSFET | |
6 | IRF4905S |
International Rectifier |
Power MOSFET |