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IRF1310S |
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| Part Number | IRF1310S |
| Manufacturer | International Rectifier |
| Description | Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switch... |
| Features |
typical surface mount application.
VDSS = 100V RDS(on) = 0.04Ω ID = 41A
SMD-220
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
41 29 16... |
| Document |
 IRF1310S Data Sheet
PDF 361.90KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1310LPBF |
International Rectifier |
Power MOSFET |
|
| 2 | IRF1310N |
International Rectifier |
Power MOSFET |
|
| 3 | IRF1310N |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRF1310NL |
International Rectifier |
Power MOSFET |
|
| 5 | IRF1310NL |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRF1310NLPBF |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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