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IRF1010EL |
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| Part Number | IRF1010EL |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
0W in a typical surface mount application. The through-hole version (IRF1010EL) is available for lowprofile applications.
S
ID = 84A
D2Pak IRF1010ES
TO-262 IRF1010EL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seco... |
| Document |
 IRF1010EL Data Sheet
PDF 123.94KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1010E |
International Rectifier |
Power MOSFET |
|
| 2 | IRF1010E |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF1010ELPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRF1010EPBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRF1010ES |
International Rectifier |
Power MOSFET |
|
| 6 | IRF1010ES |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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